Title :
Gigahertz ambipolar frequency multiplier based on CVD graphene
Author :
Wang, Han ; Hsu, Allen ; Kim, Ki Kang ; Kong, Jing ; Palacios, Tomas
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (>; 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications.
Keywords :
chemical vapour deposition; field effect transistors; frequency multipliers; graphene; mixed analogue-digital integrated circuits; CVD graphene; CVD grown graphene transistors; RF performance; ambipolar transport; fabrication processes; frequency 1.4 GHz; gigahertz ambipolar frequency multiplier; graphene ambipolar frequency multiplier; graphene frequency multipliers; graphene-based ambipolar devices; mixed-signal applications; spectral purity; wafer-scale graphene synthesis;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703423
