Title :
RF, DC, and reliability characteristics of Ta2O5 MIM capacitors
Author :
Richard, Mikaël ; Dean, Thierry ; Delage, Sylvain
Author_Institution :
Alcatel Thales III-V Lab., Marcoussis
Abstract :
We present here the fabrication, the characterization, the reliability and the modeling of MIM capacitors using Ta2O5 as a dielectric. Leakage current of 3 mA/cm2 at 4 MV/cm, a breakdown field (Ebd) of 5.2 MV/cm and a capacitance density of 0.83 fF/mum2 have been obtained. For high temperature, current instability has been observed and has been attributed to ionic diffusion in dielectric and follows the space-charge-limited theory. This phenomenon increases dramatically the TDDB (Time Dependent Dielectric Breakdown) which is a key aspect for our applications.
Keywords :
MIM devices; electric breakdown; leakage currents; tantalum compounds; DC; MIM capacitors; RF; Ta2O5; leakage current; time dependent dielectric breakdown; Current measurement; Dielectrics; Electrodes; Frequency measurement; Gold; III-V semiconductor materials; Leakage current; MIM capacitors; Radio frequency; Voltage;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751404