DocumentCode :
2370904
Title :
Electromigration testing using modulated reflectance imaging
Author :
Bivas, Albert ; Day, Mary E.
Author_Institution :
Therma-Wave Inc., Fremont, CA, USA
fYear :
1991
fDate :
11-12 Jun 1991
Firstpage :
228
Lastpage :
234
Abstract :
A new nondestructive technique, the modulated reflectance or thermal wave imaging, was used to observe the formation of defects at the surface and under the surface of metal lines, after successive steps of conventional accelerated electromigration (EM) stress. The change in film morphology and the growth of subsurface defects was correlated with the EM stress data and with the ultimate time to failure of the lines. As the wafer was heated during the EM TEST a set of lines that were not electrically stressed were also imaged at each step, in order to separate the electrical and thermal stress components. Detection and analysis of the defect growth, at early stages in the stress process, using the modulated reflectance method, could be used towards the prediction of metalization lifetime and reliability, reducing considerably the duration of stress tests
Keywords :
VLSI; electromigration; environmental testing; life testing; metallisation; reliability; VLSI; accelerated electromigration stress test; change in film morphology; defects formation observations; growth of subsurface defects; modulated reflectance imaging; multilevel interconnection; nondestructive technique; prediction of metalization lifetime; reliability issues; reliability prediction; thermal wave imaging; time to failure; Acceleration; Electromigration; Optical films; Photothermal effects; Reflectivity; Resistance heating; Surface morphology; Surface waves; Testing; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
Type :
conf
DOI :
10.1109/VMIC.1991.152992
Filename :
152992
Link To Document :
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