Title :
Context dependent effects on LF (1/f) noise in advanced CMOS devices
Author :
Srinivasan, P. ; Olubuyide, O. ; Choi, Y.S. ; Marshall, A.
Author_Institution :
Texas Instrum., Dallas, TX, USA
Abstract :
The dependence of low frequency (1/f) noise on the proximity of adjacent features within an integrated circuit is investigated. Context layout effects of LOD (Length of gate Oxide Definition), Active to Active Spacing, and DSL (Dual Stress Liners) boundary are studied and explained using mobility and number fluctuation theory. Recommendations to reduce 1/f noise are provided.
Keywords :
1/f noise; CMOS integrated circuits; 1/f noise; CMOS devices; context dependent effects; dual stress liners; integrated circuit; length of gate oxide definition;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703433
