DocumentCode
2370931
Title
Context dependent effects on LF (1/f) noise in advanced CMOS devices
Author
Srinivasan, P. ; Olubuyide, O. ; Choi, Y.S. ; Marshall, A.
Author_Institution
Texas Instrum., Dallas, TX, USA
fYear
2010
fDate
6-8 Dec. 2010
Abstract
The dependence of low frequency (1/f) noise on the proximity of adjacent features within an integrated circuit is investigated. Context layout effects of LOD (Length of gate Oxide Definition), Active to Active Spacing, and DSL (Dual Stress Liners) boundary are studied and explained using mobility and number fluctuation theory. Recommendations to reduce 1/f noise are provided.
Keywords
1/f noise; CMOS integrated circuits; 1/f noise; CMOS devices; context dependent effects; dual stress liners; integrated circuit; length of gate oxide definition;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703433
Filename
5703433
Link To Document