Title :
Random telegraph noise in 45-nm CMOS: Analysis using an on-chip test and measurement system
Author :
Realov, Simeon ; Shepard, Kenneth L.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
RTN measurements in 45-nm CMOS across device bias and geometry using an on-chip characterization system are reported. An automated methodology for extracting RTN levels, amplitude and dwell times is developed. Complex RTN magnitude is statistically modeled, and device size and bias parameter dependencies of the developed model are examined.
Keywords :
CMOS integrated circuits; telegraphy; CMOS; RTN measurements; bias parameter; device bias; device size; geometry; measurement system; on-chip characterization system; on-chip test; random telegraph noise; size 45 nm; statistical modeling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703436
