• DocumentCode
    2371020
  • Title

    Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments

  • Author

    Degraeve, R. ; Roussel, Ph ; Goux, L. ; Wouters, D. ; Kittl, J. ; Altimime, L. ; Jurczak, M. ; Groeseneken, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    This paper demonstrates the switching of several conductive filaments in RRAM using a small-size FUSI gate NMOS transistor. The theory for predicting the maximum applicable Vset is elaborated. Modeling of filament conduction with a quantum mechanical model reveals that the reset operation corresponds to a narrowing of the filament.
  • Keywords
    MOSFET; electric breakdown; random-access storage; conduction mechanism; filament conduction; generic learning; multiple filaments; quantum mechanical model; resistive RAM; small-size FUSI gate NMOS transistor; switching mechanism; time-dependent dielectric breakdown;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703438
  • Filename
    5703438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2371020