Title :
A High Performance Low IF Receiver for Wireless Local Positioning Applications
Author :
Subramanian, Viswanathan ; Krcmar, Marko ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Univ. of Technol., Berlin
Abstract :
This work demonstrates an integrated low noise, high gain receiver targeted for wireless local positioning applications. The receiver is implemented in a 0.18 mum SiGe BiCMOS technology. With a single ended input and differential output the receiver comprises a two stage bipolar low noise amplifier with integrated on-chip transformer for single to differential conversion and a double balanced mixer based on folded Gilbert cell architecture. The LNA and mixer circuits are integrated through wire bonding. According to the system frequency planning, RF and IF frequency bands of the receiver are 5.725 GHz to 5.875 GHz and 500 kHz to 5 MHz. At 5.8 GHz RF and 5 MHz IF, the integrated receiver performance comprise 28 dB power gain, 34 dB voltage gain, 2.3 dB noise figure, -30 dBm of input power at 1 dB gain compression and -24 dBm input third order intercept point. The low noise and high gain performance of the proposed receiver topology makes it to be an optimum choice for the targeted local positioning application based on frequency modulated continuous wave (FMCW) radar.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; radio receivers; LNA; double balanced mixer; folded Gilbert cell architecture; frequency 5.725 GHz to 5.875 GHz; frequency 500 kHz to 5 MHz; frequency modulated continuous wave radar; gain 1 dB; gain 28 dB; gain 34 dB; high gain receiver; high performance low IF receiver; integrated low noise; integrated on chip transformer; mixer circuits; noise figure 2.3 dB; single ended input; size 0.18 mum; system frequency planning; wire bonding; wireless local positioning; BiCMOS integrated circuits; Differential amplifiers; Germanium silicon alloys; Integrated circuit technology; Low-noise amplifiers; Mixers; Performance gain; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751412