Temperature- and time-dependent conduction controlled by activation energy in PCM

Author

Fugazza, D. ; Ielmini, D. ; Montemurro, G. ; Lacaita, A.L.

Author_Institution

Dipt. di Elettron. e Inf. & IU.NET, Politec. di Milano, Milan, Italy

fYear

2010

fDate

6-8 Dec. 2010

Abstract

A deep insight in the conduction processes in phase-change memory (PCM) devices is needed for a reliable size scaling of the technology. In this paper we discuss and model the temperature and time dependences of the programmed cell resistance. The non-Arrhenius behavior of the resistance is interpreted by temperature-dependent current localization in the frame of the distributed Poole-Frenkel model. Experimental evidence is shown for current noise and drift being dictated by changes of the activation energy for hopping conduction. Models for current noise and drift are developed and used for projections as a function of the PCM technology node.

Keywords

Poole-Frenkel effect; phase change memories; PCM technology node; activation energy; current drift; current noise; distributed Poole-Frenkel model; hopping conduction; non-Arrhenius behavior; phase-change memory devices; programmed cell resistance; size scaling; temperature-dependent conduction; temperature-dependent current localization; time-dependent conduction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703443

Filename

5703443