DocumentCode
2371136
Title
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
Author
Padilla, A. ; Burr, G.W. ; Virwani, K. ; Debunne, A. ; Rettner, C.T. ; Topuria, T. ; Rice, P.M. ; Jackson, B. ; Dupouy, D. ; Kellock, A.J. ; Shelby, R.M. ; Gopalakrishnan, K. ; Shenoy, R.S. ; Kurdi, B.N.
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
fYear
2010
fDate
6-8 Dec. 2010
Abstract
We show that bias polarity can greatly accelerate device failure in GST- based (GeSbTe) PCM devices, and trace this effect to elemental segregation, initially driven by bias across the melt but then enhanced during the crystallization process. Implications include device, pulse, and materials design for high endurance.
Keywords
antimony compounds; crystallisation; germanium compounds; phase change memories; GST-based phase change memory device; GeSbTe; crystallization process; elemental segregation; voltage polarity effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703444
Filename
5703444
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