• DocumentCode
    2371182
  • Title

    Modeling and simulation of packaging substrate effects on radio frequency integrated circuits

  • Author

    Benedik, Christopher ; Ren, Shaolei

  • Author_Institution
    Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
  • fYear
    2012
  • fDate
    25-27 July 2012
  • Firstpage
    158
  • Lastpage
    162
  • Abstract
    In this paper an analysis of the effects of integrated circuit packaging substrates on a radio frequency (RF) IC is presented. At RF frequencies the effects of packaging parasitics become crucial when assembling an RF system in package (SiP) or integrating a single die with a package. A differential buffer, which had been previously fabricated in a 90nm CMOS process is used as a vehicle to analyze the effects of packaging on performance. The integration of the buffer die with the package is modeled and analyzed.
  • Keywords
    CMOS integrated circuits; integrated circuit modelling; integrated circuit reliability; radiofrequency integrated circuits; system-in-package; CMOS process; RF IC; RF SiP; RF system in package; integrated circuit packaging substrates; packaging parasitic effects; radiofrequency integrated circuits; size 90 nm; dielectric modeling; integrated circuit packaging; radio frequency integrated circuit; substrate modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference (NAECON), 2012 IEEE National
  • Conference_Location
    Dayton, OH
  • ISSN
    0547-3578
  • Print_ISBN
    978-1-4673-2791-6
  • Type

    conf

  • DOI
    10.1109/NAECON.2012.6531048
  • Filename
    6531048