Title :
Electromigration improvements with titanium underlay and overlay in Al(Cu) metallurgy
Author :
Estabil, J.J. ; Rathore, H.S. ; Levine, E.N.
Author_Institution :
Gen. Technol. Div., IBM Corp., Hopewell Junction, NY, USA
Abstract :
The reliability advantages of Ti-Al(Cu)-Ti are introduced in this work. Outstanding tolerance to electromigration damage is measured both single level interconnections and two-level interconnections with tungsten via-studs. A greater than 100× improvement in the median time to failure (t50) is measured for Ti-Al(Cu)-Ti interconnections over simple Al(Cu). An integrated, four-level metallization has been realized
Keywords :
VLSI; aluminium alloys; copper alloys; electromigration; metallisation; reliability; titanium; MTTF; Ti-AlCu-Ti; VLSI; four-level metallization; median time to failure; multilevel interconnection; reliability issues; single level interconnections; tolerance to electromigration damage; two-level interconnections; Annealing; Conductors; Electromigration; Integrated circuit interconnections; Life testing; Metallization; Sputter etching; Thermal resistance; Titanium; Tungsten;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152994
