• DocumentCode
    2371330
  • Title

    Electromigration improvements with titanium underlay and overlay in Al(Cu) metallurgy

  • Author

    Estabil, J.J. ; Rathore, H.S. ; Levine, E.N.

  • Author_Institution
    Gen. Technol. Div., IBM Corp., Hopewell Junction, NY, USA
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    242
  • Lastpage
    248
  • Abstract
    The reliability advantages of Ti-Al(Cu)-Ti are introduced in this work. Outstanding tolerance to electromigration damage is measured both single level interconnections and two-level interconnections with tungsten via-studs. A greater than 100× improvement in the median time to failure (t50) is measured for Ti-Al(Cu)-Ti interconnections over simple Al(Cu). An integrated, four-level metallization has been realized
  • Keywords
    VLSI; aluminium alloys; copper alloys; electromigration; metallisation; reliability; titanium; MTTF; Ti-AlCu-Ti; VLSI; four-level metallization; median time to failure; multilevel interconnection; reliability issues; single level interconnections; tolerance to electromigration damage; two-level interconnections; Annealing; Conductors; Electromigration; Integrated circuit interconnections; Life testing; Metallization; Sputter etching; Thermal resistance; Titanium; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.152994
  • Filename
    152994
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2371330