DocumentCode :
2371431
Title :
Class-AB/F Doherty Power Amplifiers
Author :
Kang, Daehyun ; Yu, Daekyu ; Min, Kyoungjoon ; Choi, Jinsung ; Jun, Myoungsu ; Kim, Dongsu ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang
fYear :
2008
fDate :
27-31 Oct. 2008
Firstpage :
230
Lastpage :
233
Abstract :
The class-AB/F Doherty power amplifier (PA) adopts the concept of the class-AB/F PA to enhance efficiency while satisfying linearity. The third harmonic control circuits of the PA improve the efficiency without deteriorating the linearity, and the Doherty PA improves the linearity further by IM3 cancelation. The class-AB/F chips are fabricated by an InGaP/GaAs HBT process and combined on a PCB with a-quarter-wavelength transformer. The operation of the class-AB/F Doherty PA is demonstrated with a 54 Mbps/64 QAM OFDM signal having a 10.3 dB PAPR. The Doherty PA has EVM of 3% and the PAE of 31.5% at 24 dBm of average output power, 10.5 dB backed-off from P1dB of 34.5 dBm. The PA operates efficiently and linearly, suitable to the next generation of handset applications.
Keywords :
III-V semiconductors; OFDM modulation; gallium arsenide; heterojunction bipolar transistors; indium compounds; power amplifiers; printed circuits; quadrature amplitude modulation; HBT; IM3 cancelation; InGaP-GaAs; OFDM; PCB; QAM; bit rate 54 Mbit/s; class-AB/F Doherty power amplifier; heterojunction bipolar transistors; printed circuit board; quadrature amplitude modulation; quarter-wavelength transformer; third harmonic control circuits; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Linearity; OFDM; Peak to average power ratio; Power amplifiers; Power generation; Quadrature amplitude modulation; Telephone sets;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
Type :
conf
DOI :
10.1109/EUMC.2008.4751430
Filename :
4751430
Link To Document :
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