DocumentCode
2371517
Title
Fast high power switch-emitter commutated thyristor
Author
Surma, A.M. ; Prikhodko, A.I. ; Pocrovsky, S.V.
Author_Institution
All-Russian Electrotechnical Inst., Moscow, Russia
fYear
1998
fDate
21-23 Sep 1998
Firstpage
242
Lastpage
245
Abstract
A cascode power switch, including traditional GTO and 30 parallel connected MOSFETs in series, is developed. Investigations of switch performances have been accomplished at 1250 A, 600 V with low inductive load in snubberless conditions and at 800 A, 3500 V with inductive load. Excellent dynamic characteristics are obtained
Keywords
commutation; 1250 A; 3500 V; 600 V; 800 A; GTO; cascode power switch; cathode key; dynamic characteristics; high power; inductive load; low inductive load; parallel connected MOSFET; snubberless conditions; switch performances; switch-emitter commutated thyristor;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable Speed Drives, 1998. Seventh International Conference on (Conf. Publ. No. 456)
Conference_Location
London
ISSN
0537-9989
Print_ISBN
0-85296-704-7
Type
conf
DOI
10.1049/cp:19980531
Filename
732046
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