A 8W High efficiency X-band Power pHEMT amplifier

Author

Huet, T. ; Gruenenpuett, J. ; Ouarch, Z. ; Bouw, D. ; Serru, V. ; Camiade, M. ; Chang, C. ; Chaumas, P.

Author_Institution

Modelling & Meas. Dept., United Monolithic Semicond. S.A.S, Orsay

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

289

Lastpage

292

Abstract

A monolithic two-stage high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS Power PHEMT technology called PPH25X in term of breakdown, and the adapted design regarding output mismatch and overdrive explain the performances of this device. The MMIC HPA, with a surface of 14.6 mm², provides 8 W output power in pulsed mode associated to a PAE of about 45% at ambient temperature and can operate at 6 dB compression in a wide frequency bandwidth (35% of frequency band). The good level of performance, the low sensitivity to the environment make this amplifier an excellent candidate for X band applications such as phased array active antennas.

Keywords

MMIC power amplifiers; microwave antenna arrays; power HEMT; MMIC HPA; UMS power PHEMT technology; efficiency X-band power pHEMT amplifier; frequency 7 GHz to 12.5 GHz; high efficiency amplifier; high robustness amplifier; monolithic two-stage high power amplifier; phased array active antennas; power 8 W; Electric breakdown; Frequency; High power amplifiers; MMICs; PHEMTs; Phased arrays; Power amplifiers; Power generation; Pulse amplifiers; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751445

Filename

4751445