DocumentCode :
2371713
Title :
Thermal hillocks on half-micron aluminum lines: the next reliability issue?
Author :
Pico, Carey A. ; Bonifield, Tom D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Berkeley, CA, USA
fYear :
1991
fDate :
11-12 Jun 1991
Firstpage :
256
Lastpage :
257
Abstract :
Thermally induced Al hillocks cause manufacturing and reliability problems in integrated devices. These thermal hillocks, which form during the sinter process, interfere with the uniformity of subsequent spin-on materials (e.g. photoresist) and can create pinholes susceptible to corrosion or electrical breakdown. Thermal hillocks have both lateral and vertical dimensions on the order of 1 μm. The authors find that thermal hillocks are present on lines having linewidths greater than 3 μm, absent on lines having linewidths between 0.8 μm and 3 μm, and, again, present on lines having linewidths of 0.6 μm. These last hillocks are defined as line hillocks to distinguish them from hillocks occurring in the wider areas
Keywords :
VLSI; aluminium alloys; metallisation; reliability; 0.6 to 0.5 micron; 3 micron; Al alloys; VLSI; dimensions; line hillocks; linewidths; multilevel interconnection; reliability issues; sinter process; thermal hillocks; Aluminum; Computer science; Frequency; Grain boundaries; Grain size; Instruments; Metallization; Reliability engineering; Resists; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
Type :
conf
DOI :
10.1109/VMIC.1991.152996
Filename :
152996
Link To Document :
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