Title :
A 28-dBm pHEMT Power Amplifier Using Voltage Combiner for K-Band Applications
Author :
Koo, Bonhoon ; Park, Changkun ; Lee, Kyung Ai ; Chun, Jong-Hoon ; Hong, Songcheol
Author_Institution :
Sch. of EECS, Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
Abstract :
A K-band power amplifier was implemented using a 0.25-mum pHEMT process. A tournament-shaped voltage combiner that combines power by combining voltage was used in the output matching network. The voltage combining method alleviates the drain voltage swing requirement of the power transistor, whose junction breakdown voltage becomes quite low especially for high frequency applications. The chip size of the designed power amplifier is only 2.52 mm2. The amplifier achieved a P1dB of 28.0 dBm. The measured linear gain was 25 dB at 23.1 GHz. These demonstrate the operation of the tournament-shaped voltage combiner at K-band.
Keywords :
electric breakdown; microwave power amplifiers; power HEMT; power transistors; K-band power amplifier; drain voltage swing requirement; frequency 23.1 GHz; gain 25 dB; junction breakdown voltage; output matching network; pHEMT power amplifier; power transistor; size 0.25 mum; tournament-shaped voltage combiner; Breakdown voltage; Frequency; High power amplifiers; K-band; Microwave amplifiers; PHEMTs; Power amplifiers; Power generation; Power transistors; Power transmission lines;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751446
