Fully Integrated 5.8 GHz SiGe Power Amplifier

Author

Gruner, Daniel ; Gustat, Hans ; Boeck, Georg

Author_Institution

Microwave Eng. Lab., Berlin Univ. of Technol., Berlin

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

301

Lastpage

304

Abstract

A fully integrated broadband push-pull power amplifier (PA) has been developed and fabricated in a 0.25 mum SiGe-HBT technology. Monolithic transformers are used to transform the 50 iquest input/output of the amplifier to the optimum load and source impedances of an efficient push-pull pair. Electromagnetic modeling of the whole chip structure has been carried out in order to optimize the performance of the presented PA. It achieves an output power of 20/23 dBm in saturation and 18/21 dBm at 1 dB power compression at a supply voltage of 1.2/1.8 V and a center frequency of 5.8 GHz. The maximum PAE is 18/20 %. A gain of (9.7plusmn1) dB was observed over a wide frequency range from 4 Ghz up to 6.4 GHz.

Keywords

Ge-Si alloys; MMIC; heterojunction bipolar transistors; integrated circuit manufacture; power amplifiers; transformers; wideband amplifiers; SiGe power amplifier; SiGe-HBT technology; electromagnetic modeling; frequency 4 GHz to 6.4 GHz; frequency 5.8 GHz; fully integrated broadband; maximum PAE; monolithic transformers; power compression; push-pull power amplifier; source impedances; supply voltage; Broadband amplifiers; Electromagnetic modeling; Frequency; Germanium silicon alloys; Impedance; Power amplifiers; Power generation; Silicon germanium; Transformers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751448

Filename

4751448