A 1000 V merged P-N/Schottky (MPS) high-speed low-loss power rectifier

Author

Gilmartin, S.F. ; Murray, A.F.J. ; Lane, W.A.

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

fYear

1998

fDate

21-23 Sep 1998

Firstpage

375

Lastpage

380

Abstract

This paper demonstrates, for the first time, the ability to fabricate low-loss high-speed MPS power rectifiers that can block reverse voltages in excess of 1000 V. Controlling the characteristics of the 1000 V MPS by varying the relative device active areas of P+/N- and Schottky regions is also demonstrated. This principal is the same as reported by Tu and Baliga (see IEEE Electron Device Lett. vol.EDL-7, p.1307-15, 1993), but is extended to the higher voltage regime. The impact of different MPS Schottky active areas on reverse leakage and switching characteristics is also investigated. Both simulation and experimental data are presented to demonstrate the benefits of using MPS rectifiers as high voltage low-loss fast switching power rectifiers

Keywords

rectifying circuits; 1000 V; P+/N- regions; Schottky regions; device fabrication; forward conduction; high-speed low-loss power rectifier; merged P-N/Schottky rectifier; relative device active areas; reverse leakage; reverse voltages blocking; switching characteristics;

fLanguage

English

Publisher

iet

Conference_Titel

Power Electronics and Variable Speed Drives, 1998. Seventh International Conference on (Conf. Publ. No. 456)

Conference_Location

London

ISSN

0537-9989

Print_ISBN

0-85296-704-7

Type

conf

DOI

10.1049/cp:19980554

Filename

732072