DocumentCode :
2372002
Title :
Analysis of the IGBT/freewheeling diode switching behaviour during turn-on in hard switching applications
Author :
Rahimo, M.T. ; Chamund, D.J. ; Shammas, N.Y.A.
Author_Institution :
Mital Semicond., UK
fYear :
1998
fDate :
21-23 Sep 1998
Firstpage :
381
Lastpage :
386
Abstract :
The aim of the work presented in this paper is to gain a better understanding of the IGBT, freewheeling diode and circuit interaction during turn-on in a hard switching inductive load application. The main factors influencing the switching speed (commutating di/dt) and the turn-on losses in both the IGBT and freewheeling diode are discussed and analysed with the aid of simulation and experimental results. This study is particularly important in order to reach to some important conclusions on the device and circuit design requirements for optimum performance. Also, it provides a more detailed insight on the device and circuit topology that allows an acceptable compromise between switching speed, power dissipation and electromagnetic radiation
Keywords :
insulated gate bipolar transistors; IGBT; circuit design; circuit interaction; circuit topology; electromagnetic radiation; freewheeling diode; hard switching applications; inductive load application; optimum performance; power dissipation; switching behaviour; switching speed; turn-on losses;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Power Electronics and Variable Speed Drives, 1998. Seventh International Conference on (Conf. Publ. No. 456)
Conference_Location :
London
ISSN :
0537-9989
Print_ISBN :
0-85296-704-7
Type :
conf
DOI :
10.1049/cp:19980555
Filename :
732073
Link To Document :
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