• DocumentCode
    2372049
  • Title

    Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

  • Author

    Griffoni, A. ; Chen, S.-H. ; Thijs, S. ; Linten, D. ; Scholz, M. ; Groeseneken, G.

  • Author_Institution
    Electr. Eng. Dept., K.U. Leuven, Leuven, Belgium
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    The turn-on behavior of high-voltage-tolerant nLDMOS SCRs is investigated during CDM ESD events. An early failure occurs because of gate-oxide damage. A device optimization is proposed, which improves the CDM ESD robustness up to 2.7x, unchanging the HBM ESD robustness.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; low-power electronics; semiconductor device models; thyristors; CMOS technology; charged device model; device optimization; electrostatic discharge; gate-oxide damage; laterally diffused nMOS; silicon controlled rectifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703483
  • Filename
    5703483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2372049