Title :
Observation of a copper-aluminum precipitate electromigration in a submicron width aluminum interconnection
Author :
Shingubara, Shoso ; Nishida, Hiroyuki ; Fukukawa, Atsushi ; Sakaue, Hiroyuki ; Horiike, Yasuhiro
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
Abstract :
Electromigration behavior of a copper-aluminum precipitate in a half micron width Al-2% Cu interconnection was observed in detail using scanning electron microscopy. It was found that a copper-aluminium precipitate moved to anode direction, and a void was formed at cathode side of of a copper-aluminum precipitate. The mechanisms for these phenomena were discussed in terms of electromigration drift velocities of copper and aluminum. The experimental results indicated that severe damage by electromigration was caused by the existence of copper-aluminum precipitate, which is contrary to the well known copper addition effect for the prolongation of electromigration life time
Keywords :
VLSI; aluminium alloys; copper alloys; electromigration; metallisation; reliability; 0.5 micron; Al-Cu alloy; Cu-Al precipitate electromigration; VLSI; electromigration drift velocities; experimental results; multilevel interconnection; reliability issues; scanning electron microscopy; submicron width; Aluminum; Annealing; Anodes; Cathodes; Copper; Electromigration; Electron mobility; Scanning electron microscopy; Shape; Testing;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152998
