Observation of a copper-aluminum precipitate electromigration in a submicron width aluminum interconnection

Author

Shingubara, Shoso ; Nishida, Hiroyuki ; Fukukawa, Atsushi ; Sakaue, Hiroyuki ; Horiike, Yasuhiro

Author_Institution

Dept. of Electr. Eng., Hiroshima Univ., Japan

fYear

1991

fDate

11-12 Jun 1991

Firstpage

265

Lastpage

271

Abstract

Electromigration behavior of a copper-aluminum precipitate in a half micron width Al-2% Cu interconnection was observed in detail using scanning electron microscopy. It was found that a copper-aluminium precipitate moved to anode direction, and a void was formed at cathode side of of a copper-aluminum precipitate. The mechanisms for these phenomena were discussed in terms of electromigration drift velocities of copper and aluminum. The experimental results indicated that severe damage by electromigration was caused by the existence of copper-aluminum precipitate, which is contrary to the well known copper addition effect for the prolongation of electromigration life time

Keywords

VLSI; aluminium alloys; copper alloys; electromigration; metallisation; reliability; 0.5 micron; Al-Cu alloy; Cu-Al precipitate electromigration; VLSI; electromigration drift velocities; experimental results; multilevel interconnection; reliability issues; scanning electron microscopy; submicron width; Aluminum; Annealing; Anodes; Cathodes; Copper; Electromigration; Electron mobility; Scanning electron microscopy; Shape; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.152998

Filename

152998