Title :
rFGA: CMOS-nano hybrid FPGA using RRAM components
Author :
Liu, Ming ; Wang, Wei
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing
Abstract :
In this paper, novel reconfigurable architectures are introduced to utilize high-density resistive memory (RRAM) to build FPGA components. Different from the existing CMOS-nano hybrid circuits that use crossbars, the proposed rFPGA structures consist of mainly 1T1R structures (1 CMOS transistor is integrated with a two-terminal resistive nanojunction) that can be fabricated using a CMOS-compatible process. The proposed 2D architecture maintains the baseline FPGA cell designs and significantly reduces the size of memory and routing elements using 1T1R structures. The proposed 3D architecture further improves the density of the 2D version by efficiently integrating RRAM and CMOS layers in three dimensions. The simulation results demonstrate that the proposed 2D and 3D FPGA structures can provide at least 2times-3times performance gains, compared to the corresponding 2D and 3D CMOS FPGA´s.
Keywords :
CMOS logic circuits; CMOS memory circuits; field programmable gate arrays; logic design; nanoelectronics; random-access storage; reconfigurable architectures; 2D architecture; 3D architecture; CMOS-nano hybrid FPGA; RRAM components; baseline FPGA cell designs; high-density resistive memory; rFPGA structures; reconfigurable architectures; CMOS memory circuits; CMOS process; Circuits and systems; Computer architecture; Electron devices; Field programmable gate arrays; Nanotechnology; Performance gain; Reconfigurable architectures; Routing; 3D integration; FPGA; RRAM; nanojunction;
Conference_Titel :
Nanoscale Architectures, 2008. NANOARCH 2008. IEEE International Symposium on
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-2552-5
Electronic_ISBN :
978-1-4244-2553-2
DOI :
10.1109/NANOARCH.2008.4585797