Title :
Improved hot carrier reliability of submicron MOS devices by modifying the PECVD IMO film
Author :
Jain, Vivek ; Pramanik, Dipankar ; Nariani, Subhash R. ; Chang, K.Y.
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
The impact of the PECVD IMO film on hot carrier reliability of sub-micron MOS devices has been studied. It has been shown, for the first time, that modifying the PECVD IMO film can result in more than an order of magnitude improvement in the hot carrier reliability. The study underscores the importance of backed processing on the device reliability and provides direction for improving device reliability
Keywords :
MOS integrated circuits; VLSI; chemical vapour deposition; hot carriers; metallisation; reliability; MOS IC; PECVD IMO film; VLSI; backed processing; device reliability; device reliability improvement; hot carrier reliability; multilevel interconnection; process modification; reliability issues; submicron MOS devices; Degradation; Electrons; Hot carriers; MOS devices; Optical films; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Silicon;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152999
