A 2.14 GHz 50 Watt 60% Power Added Efficiency GaN Current Mode Class D Power Amplifier

Author

Tanany, Ahmed Al ; Sayed, Ahmed ; Boeck, Georg

Author_Institution

Berlin Univ. of Technol., Berlin

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

432

Lastpage

435

Abstract

This paper presents a 50 W current mode class D (CMCD) power amplifier (PA) operating at 2.14 GHz. The PA is implemented using GaN pHEMT. The peak drain efficiency (iquest) is 62.7% and power added efficiency (PAE) is 60.3%. A resonator without an inductor was implemented to eliminate any loss that results from the low quality factors. The resonator uses narrow microstrip DC-feed lines located close to the drain leads which is used as resonator inductance. A model of the output capacitance (i.e.; C_ds) was extracted from the die model and is used as a part of the resonator. Finally, a comparison between an ideal parallel LC with the proposed resonator was simulated to achieve the required impedance termination.

Keywords

III-V semiconductors; capacitance; gallium compounds; high electron mobility transistors; inductance; microstrip directional couplers; microstrip resonators; microwave power amplifiers; wide band gap semiconductors; GaN; current mode class D power amplifier; efficiency 60.3 percent; efficiency 62.7 percent; frequency 2.14 GHz; narrow microstrip DC-feed lines; output capacitance; pHEMT; peak drain efficiency; power 50 W; power added efficiency; resonator inductance; switch mode power amplifiers; Capacitance; Gallium nitride; Impedance; Microwave amplifiers; PHEMTs; Power amplifiers; Power generation; Switches; Thermal resistance; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751481

Filename

4751481