Title :
Nanowire biosensor
Author :
Neizvestny, Igor G.
Author_Institution :
Inst. of Semicond. Phys. Siberian Branch of RAS, Novosibirsk
Abstract :
This paper presents the principles and physical properties of biosensor prepared on the base of silicon nanowires
Keywords :
DNA; biosensors; elemental semiconductors; field effect transistors; nanowires; silicon; DNA; Si; biosensor; field-effect transistor; nanowire; silicon; Biosensors; Cells (biology); Conductivity; DNA; FETs; Nanobioscience; Physics; Proteins; Silicon; Viruses (medical); DNA; field-effect transistor; silicon nanowires;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585837
