DocumentCode
2373008
Title
Nanowire biosensor
Author
Neizvestny, Igor G.
Author_Institution
Inst. of Semicond. Phys. Siberian Branch of RAS, Novosibirsk
fYear
2008
fDate
1-5 July 2008
Firstpage
3
Lastpage
5
Abstract
This paper presents the principles and physical properties of biosensor prepared on the base of silicon nanowires
Keywords
DNA; biosensors; elemental semiconductors; field effect transistors; nanowires; silicon; DNA; Si; biosensor; field-effect transistor; nanowire; silicon; Biosensors; Cells (biology); Conductivity; DNA; FETs; Nanobioscience; Physics; Proteins; Silicon; Viruses (medical); DNA; field-effect transistor; silicon nanowires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location
Novosibirsk
ISSN
1815-3712
Print_ISBN
978-5-7782-0893-3
Type
conf
DOI
10.1109/SIBEDM.2008.4585837
Filename
4585837
Link To Document