0.5 μm line width molybdenum metallization for the first level interconnection

Proposes a multilevel interconnection process using molybdenum(Mo) with 0.5 μm line width for the first level and aluminum(Al) for the second level interconnection. To apply 0.5 μm Mo features to a multilevel interconnection system, it is studied to provide better adhesion of interlevel silicon dioxide(SiO₂) to Mo, to reduce the resistivities of Mo films, and to etch fine Mo patterns. The Mo metallization process developed is successfully applied to the first level interconnection with a design pitch (line and space) of 1.1 μm. Reliability tests reveal the 0.5 μm Mo metallization provides high migration immunity as expected