Title :
Investigation of thin-film nanocomposite materials by monochromatic null ellipsometry
Author :
Lebedev, Mikhail S. ; Ayupov, Boris M.
Author_Institution :
Nikolaev Inst. of Inorg. Chem. SB RAS, Novosibirsk
Abstract :
Possibility of a method ellipsometry application for investigation of the multi-layer films and structures was shown. Reliability of obtaining data was confirmed with independent method of X-rays photoelectron spectroscopy. Layerwise composition of HfO2/SiO2/Si stack was studied. It was shown that interfacial layer of hafnium silicate was formed between HfO2 film and Si substrate. Investigation of the HfO2/Si, ZrO2/Si, Ta2O5/Si, Al2O3/Si structures after annealing in oxygen ambient disclosed that the oxides under study were permeable for diffusion of oxygen. As a result the thickness of SiO2 layer was increased during annealing process. It was revealed, that Al2O3-films were oxygen-tight. The developed ellipsometric method was used for optimization of the (HfO2)x(Al2O3)1-x layers obtaining.
Keywords :
X-ray photoelectron spectra; annealing; dielectric thin films; diffusion; ellipsometry; hafnium compounds; multilayers; nanocomposites; permeability; silicon; tantalum compounds; zirconium compounds; Al2O3-Si; HfO2-SiO2-Si; Si; Ta2O5-Si; X-ray photoelectron spectroscopy; ZrO2-Si; annealing; dielectric films; hafnium silicate; interfacial layer; monochromatic null ellipsometry; multilayer films; oxygen diffusion; permeability; reliability; thin-film nanocomposite; Annealing; Ellipsometry; Hafnium oxide; Nanostructured materials; Optimization methods; Semiconductor films; Spectroscopy; Substrates; Transistors; X-rays; Ellipsometry; high-k dielectric films; layer;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585838
