Title :
Evaporation of thin oxide layer from Si-(111) surface (simulation)
Author :
Usenkov, Stanislav V. ; Yanovitskaya, Zoya Sh ; Schwartz, Natalia L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
Abstract :
Monte Carlo (MC) simulation of thin oxide evaporation from silicon surface was carried out. Including in MC model chemical reactions of creation and dissociation of silicon monoxide during annealing makes it possible to simulate evaporation of a thin oxide layers. It was shown, that defects in the oxide matrix provoke starting of the layer dissociation processes.
Keywords :
Monte Carlo methods; annealing; crystal defects; dissociation; elemental semiconductors; evaporation; oxidation; silicon; surface chemistry; MC model chemical reactions; Monte Carlo simulation; Si; annealing; defects; dissociation; evaporation; silicon monoxide; silicon surface simulation; thin oxide layer; Chemicals; Image analysis; Lattices; Microelectronics; Monte Carlo methods; Physics; Silicon compounds; Simulated annealing; Stacking; Temperature; Monte Carlo; Silicon dioxide; evaporation; modeling;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585840
