GaN Islands density growth kinetics on (0001) AlN surface by Ammonia molecular-beam epitaxy

Author

Nikitin, Andrey N. ; Mansurov, Vladimir G. ; Galitsyn, Yuriy G. ; Zhuravlev, Konstantin S.

Author_Institution

Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk

fYear

2008

fDate

1-5 July 2008

Firstpage

48

Lastpage

48

Abstract

At the present work 3D nucleation kinetics of GaN on (0001)AlN was experimentally studied. The initial stages of the GaN growth on the flat AlN surface were monitored by a real-time reflection high-energy electron diffraction (RHEED) technique. Exponential 3D-nucleation kinetics of GaN was experimentally revealed. Experimental results are discussed in the frame of scaling equation for the islands density.

Keywords

III-V semiconductors; aluminium compounds; ammonia; electron diffraction; gallium compounds; island structure; molecular beam epitaxial growth; nucleation; reaction kinetics; surface structure; wide band gap semiconductors; 3D nucleation kinetics; AlN; GaN; NH₃; RHEED; aluminum nitride (0001) surface; ammonia molecular-beam epitaxy; density growth kinetics; gallium nitride islands; island density; reflection high energy electron diffraction; scaling equation; Diffraction; Electrons; Gallium nitride; Kinetic theory; Molecular beam epitaxial growth; Monitoring; Physics; Reflection; Substrates; Temperature; MBE; heterogeneous nucleation; kinetics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on

Conference_Location

Novosibirsk

ISSN

1815-3712

Print_ISBN

978-5-7782-0893-3

Type

conf

DOI

10.1109/SIBEDM.2008.4585843

Filename

4585843