Monte Carlo simulation of initial stages of Si (111) Oxidation by O2 near critical conditions

Monte-Carlo simulation of Si (111) surface interaction with dry oxygen near the critical conditions, separating Si etching and oxidation regions, was carried out. The reaction of formation and decomposition of silicon monoxide was included in the model. Just this reaction determines the rate of oxygen accumulation on Si (111) surface. Model critical conditions were determined from the Si etching to oxide growth transition. The scheme and parameters of chemical reactions were selected in such a way that the model critical conditions, would correspond to experimental data.