The Homoepitaxy GaAs on (001)-β(2×4) surface

Author

Dmitriev, Dmitriy V. ; Galitsyn, Yuriy G. ; Moshenko, Sergey P. ; Toropov, Alexander I.

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk

fYear

2008

fDate

1-5 July 2008

Firstpage

12

Lastpage

13

Abstract

This study aims to analyze the mechanism of 2D growth of crystals via the homoepitaxial growth of GaAs on the (001)-beta(2times4) surface by molecular beam epitaxy. The behavior of the full diffraction pattern from RHEED which indicates layer-by-layer growth is analyzed. The equation of state of the growing surface is derived in the context of the mean field theory. Results show that the homoepitaxy of GaAs is considered as a 2D first-order phase transition.

Keywords

III-V semiconductors; equations of state; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; 2D crystal growth; 2D first-order phase transition; GaAs; RHEED; diffraction pattern; equation of state; homoepitaxial growth; layer-by-layer growth; mean field theory; molecular beam epitaxy; Crystals; Diffraction; Electron beams; Epitaxial growth; Filling; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical reflection; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on

Conference_Location

Novosibirsk

ISSN

1815-3712

Print_ISBN

978-5-7782-0893-3

Type

conf

DOI

10.1109/SIBEDM.2008.4585847

Filename

4585847