Title :
Electron trap levels in PbSnTe:In
Author :
Klimov, Alexander E. ; Paschin, Nicolay S. ; Shesteryakova, Valentina N. ; Shumsky, Vladimir N.
Author_Institution :
Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk
Abstract :
In the present paper, the energy spectrum of localized states in PbSnTe:In is reported which was deduced from experimental current-voltage characteristics of PbSnTe:In films measured at T = 4.2 K. The spectrum was found to be quasi-continuous yet exhibiting a non-uniform energy distribution of states in the forbidden gap of PbSnTe:In. Possible nature of the localized states is discussed.
Keywords :
IV-VI semiconductors; electron traps; energy gap; indium; lead compounds; localised states; semiconductor thin films; tin compounds; PbSnTe:In; current-voltage characteristics; electron trap levels; energy spectrum; forbidden gap; localized states; semiconductor films; temperature 4.2 K; Charge carriers; Current measurement; Current-voltage characteristics; Electron traps; Glass; Impurities; Indium; Photoconducting materials; Photoconductivity; Temperature; PbSnTe:In; localized states;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585849
