Title :
Electrophysical behaviors of MIS structure with anisotropic block bounder
Author :
Perov, G.V. ; Kalinin, S.V. ; Malahov, P.Yu.
Author_Institution :
Siberian State Univ. of Telecommun. & Inf., Novosibirsk
Abstract :
The model of behavior of the fixed, mobile charge, charge on superficial states, and traps in MIS structures with a non-uniform blocking surface of the semiconductor is offered.
Keywords :
MIS structures; electron traps; surface structure; MIS structure; anisotropic block bounder; charge on superficial states; electrophysical behaviors; fixed; mobile charge; nonuniform blocking surface; semiconductor; traps; Anisotropic magnetoresistance; Dielectric films; Dielectric materials; Dielectric substrates; Oxidation; Phase change materials; Polarization; Semiconductor films; Surface charging; Temperature dependence; MIS Structure; boundary; semiconductor; surface;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585857
