Title :
Dependence of SAW resonator 1/f noise on device size
Author :
Parker, Thomas E. ; Andres, Donald
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
Experiments were conducted with eight 450-MHz two-port SAW (surface acoustic wave) resonators of four different designs which demonstrate that a resonator´s 1/f noise depends approximately inversely on the active acoustic area of the device. The ion-etched groove resonators were all fabricated from a single piece of quartz. The active acoustic areas of these devices ranged from approximately 1.7 × 10 4 square wavelengths (3.4 × 10-2 cm2 ). The measured flicker noise levels varied from Sy (f = 1 Hz) = 3.4 × 10-23 to 6.4 × 10-24/Hz, with the smallest-area devices exhibiting the highest noise levels. This observation is consistent with the theory that 1/f noise in acoustic resonators can be caused by localized, independent, velocity (or dimensional) fluctuations in the quartz. The fractional velocity fluctuations would have to have a magnitude close to Sv (f = 1 Hz) ≈ 2 × 10-19/Hz in order to cause the observed level of frequency fluctuations. Additional experimental data in the literature suggest that the average distance between these localized fluctuations is on the order of 10 μm
Keywords :
1/f noise; flicker noise; piezoelectric oscillations; surface acoustic wave resonators; 1/f noise; 450 MHz; acoustic resonators; active acoustic area; device size; flicker noise levels; fractional velocity fluctuations; localized fluctuations; surface acoustic wave resonators; two-port SAW resonators; 1f noise; Acoustic devices; Acoustic measurements; Acoustic noise; Acoustic waves; Active noise reduction; Fluctuations; Noise measurement; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Frequency Control Symposium, 1993. 47th., Proceedings of the 1993 IEEE International
Conference_Location :
Salt Lake City, UT
Print_ISBN :
0-7803-0905-7
DOI :
10.1109/FREQ.1993.367394