Photoluminescence of the GaAs superlattices with quasidelta-doped layers

Doping superlattices, or n-i-p-i crystals, have advanced properties for the development of novel optoelectronic devices. The delta-doping technology extends possibilities of the superlattice design and allows improving the characteristics compared with homogeneously doped n-i-p-i structures. For the delta-doping, molecular-beam epitaxy is most widely applied. The GaAs delta-doped superlattices were also grown by metal-organic vapor-phase epitaxy. For n- and p-type delta-doping, Si and C were used and tunable low-temperature photoluminescence (PL) was demonstrated. In this work, the GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-delta-doping. Earlier, such a method was applied for making the photosensitive heterostructures with the GalnAs quantum-well spacer. The PL spectra measured at 4.2 K display a structure shape with well-distinguished peaks which coincide with allowed optical transitions between quantized levels of electrons and holes in the potential relief quantum wells. Such a behavior has been also observed for structures grown by gas-source molecular-beam epitaxy