Photoelectrical processes in spectroselective photosensitive sells based on three bulk integrated photodiodes

The study deals with photoelectrical processes in photosensitive structures based on three bulk integrated p-n junctions. In this work there was studied the distribution of electrical potential and the tension of electrical field as well as the absorption of optical radiation in the space charge region (SCR) of n-p-n-p structure. There were studied the processes of charge accumulation and spectral characteristics of photosensitivity in the bulk integrated n- and p- type photosensitive structures; there were received constructive parameters of semiconductor layers and permitted values of directive voltages and considered values of noise characteristics and circuit peculiarities of photosensitive sell.