The mathematical modeling of the MOS-transistors fabrication technique in modern TCAD-systems

Author

Cherkaev, Aleksey S. ; Makarov, Evgeny A. ; Kalinin, Sergey V.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk

fYear

2008

fDate

1-5 July 2008

Firstpage

79

Lastpage

83

Abstract

Simulation of the MOS-transistors fabrication technique using TCAD (technology computer aided design) DIOS and TCAD Sentaurus process the most perspective TCAD-systems from Synopsys company at present was carried out in this work. Special attention was given to research of offered diffusion models and capabilities of the mesh generation algorithm, as these factors have direct influence on final result of modeling and a total time of calculation. In addition, the obtained results were compared with similar calculations of this structure in ldquoFACTrdquo and MicroTec-3.02 software packages.

Keywords

MOSFET; mathematical analysis; semiconductor device manufacture; semiconductor device models; technology CAD (electronics); DIOS; FACT; MOS-transistors fabrication; MicroTec-3.02 software packages; Synopsys company; TCAD Sentaurus process; TCAD-systems; mathematical modeling; mesh generation algorithm; technology computer aided design; Computational modeling; Fabrication; Integrated circuit modeling; Mathematical model; Mesh generation; Oxidation; Semiconductor process modeling; Silicon; Software packages; Virtual manufacturing; DIOS; MOS-transistor; Modeling; Sentaurus Process; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on

Conference_Location

Novosibirsk

ISSN

1815-3712

Print_ISBN

978-5-7782-0893-3

Type

conf

DOI

10.1109/SIBEDM.2008.4585873

Filename

4585873