DocumentCode
2373782
Title
Pulse Profiling for AlGaN/GaN HEMTs Large Signal Characterizations
Author
Faraj, J. ; Groote, Fabien De ; Teyssier, Jean-Pierre ; Verspecht, Jan ; Quéré, Raymond ; Aubry, Raphaël
Author_Institution
Limoges UniversityIUT GEII, Limoges
fYear
2008
fDate
27-31 Oct. 2008
Firstpage
757
Lastpage
760
Abstract
This paper deals with pulsed LSNA measurements of high power AlGaN/GaN transistors performed in a multi-harmonic passive load-pull environment. Time domain waveforms are acquired during a 150 ns window. This measurement window is moved across the 20 mus duration of pulses, the period is 1 ms. Phase and gain drifts of transistor characteristics versus time during the pulses are obtained and discussed.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; network analysers; power HEMT; semiconductor device testing; AlGaN-GaN; gain drift; large signal network analyser; multi-harmonic passive load-pull environment; phase drift; power HEMT; time 1 ms; time 150 ns; time 20 mus; Aluminum gallium nitride; Chirp modulation; Gallium nitride; HEMTs; MODFETs; Performance evaluation; Pulse amplifiers; Pulse measurements; Radio frequency; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-006-4
Type
conf
DOI
10.1109/EUMC.2008.4751563
Filename
4751563
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