The effect of modifying grain growth on step coverage, defect densities and stress in Al-Si-Cu thin films

Author

Chittipeddi, S. ; Ryan, V. ; Kannan, V.C. ; Dziuba, C.M. ; Cochran, W.T. ; Klemmer, W.O. ; Buckfeller, J.W. ; McArdle, M.J.

Author_Institution

AT&T Bell Labs., Allentown, PA, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

301

Lastpage

303

Abstract

The authors have studied the effect of varying the grain growth on the step coverage and defect densities of vias. By using the test structures described they have been able to quantify the differences between step coverage and defect density issues. The stress measurements and the TEM studies have enabled them to clearly understand the mechanisms of the two-step and ramped depositions. This is the first study which has clearly correlated the electrical results with stress measurements and physical characterization of the films. The authors have also clearly identified and studied the growth mechanism of nuclei in ramped and two-step depositions

Keywords

aluminium alloys; copper alloys; grain growth; internal stresses; metallic thin films; metallisation; silicon alloys; sputtered coatings; transmission electron microscope examination of materials; AlSiCu thin films; TEM; defect densities; electrical results; grain growth; metallization; nuclei growth mechanism; ramped deposition; sputter deposition; step coverage; stress; two-step deposition; vias; Aluminum; Density measurement; Failure analysis; Metallization; Sputtering; Stress measurement; Temperature; Testing; Transistors; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153006

Filename

153006