• DocumentCode
    2373938
  • Title

    Numerical Analysis the Performance of Field Emission Display with Secondary Electrons Emission

  • Author

    Zhao, Hongping ; Lei, Wei ; Zhang, Xiaobing ; Yang, Guodong

  • Author_Institution
    Dept. of Electron. Eng., Southeast Univ.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    509
  • Lastpage
    510
  • Abstract
    In this paper, we calculated and compared the performance of three different structures of CNT-FED: a normal triode structure, a double-gate structure, and a structure with insulator channel. By calculating the electrical field and the electron trajectories, we found that the normal triode structure is easy to induce pixel-pixel interference; while the double-gate structure subtract the anode current because of the interception of the second gate. In the structure with insulator channel, the disadvantages mentioned above can be avoided. Furthermore, when the cathode has some defects, the uniformity of the anode current can be improved because of the secondary electrons generated at the surface of the insulator wall
  • Keywords
    carbon nanotubes; field emission displays; secondary electron emission; triodes; CNT-FED; anode current; double-gate structure; electrical field; electron trajectories; field emission display; insulator channel; insulator wall; numerical analysis; pixel-pixel interference; secondary electrons emission; triode structure; Anodes; Carbon nanotubes; Cathodes; Electrodes; Electron emission; Electron sources; Flat panel displays; Insulation; Interference; Numerical analysis; FED; insulator chunnel; secondary electrons emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0108-9
  • Type

    conf

  • DOI
    10.1109/IVELEC.2006.1666406
  • Filename
    1666406