DocumentCode
2373938
Title
Numerical Analysis the Performance of Field Emission Display with Secondary Electrons Emission
Author
Zhao, Hongping ; Lei, Wei ; Zhang, Xiaobing ; Yang, Guodong
Author_Institution
Dept. of Electron. Eng., Southeast Univ.
fYear
0
fDate
0-0 0
Firstpage
509
Lastpage
510
Abstract
In this paper, we calculated and compared the performance of three different structures of CNT-FED: a normal triode structure, a double-gate structure, and a structure with insulator channel. By calculating the electrical field and the electron trajectories, we found that the normal triode structure is easy to induce pixel-pixel interference; while the double-gate structure subtract the anode current because of the interception of the second gate. In the structure with insulator channel, the disadvantages mentioned above can be avoided. Furthermore, when the cathode has some defects, the uniformity of the anode current can be improved because of the secondary electrons generated at the surface of the insulator wall
Keywords
carbon nanotubes; field emission displays; secondary electron emission; triodes; CNT-FED; anode current; double-gate structure; electrical field; electron trajectories; field emission display; insulator channel; insulator wall; numerical analysis; pixel-pixel interference; secondary electrons emission; triode structure; Anodes; Carbon nanotubes; Cathodes; Electrodes; Electron emission; Electron sources; Flat panel displays; Insulation; Interference; Numerical analysis; FED; insulator chunnel; secondary electrons emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0108-9
Type
conf
DOI
10.1109/IVELEC.2006.1666406
Filename
1666406
Link To Document