Numerical analysis of two dimensional thin film resonators

Author

Lakin, K.M.

Author_Institution

TFR Technol., Inc., Redmond, OR, USA

fYear

1993

fDate

2-4 Jun 1993

Firstpage

502

Lastpage

508

Abstract

In order to gain a better understanding of thin-film resonators fabricated at microwave frequencies a two-dimensional numerical analysis (finite-difference) formalism was derived and implemented. The formalism allows for arbitrary crystal anisotropy, rectangular material discontinuities, and two-dimensional variations in the thickness and width dimensions. Resonators are assumed to be of infinite extent in one dimension. The formalism has been extended to include additional electrodes for two-port devices such as monolithic filters. Computed results are given for aluminum nitride resonators and filters having finite thickness metallization

Keywords

acoustic microwave devices; aluminium compounds; crystal filters; crystal resonators; finite difference methods; microwave filters; piezoelectric thin films; AlN resonators; crystal anisotropy; finite difference methods; finite thickness metallization; microwave frequencies; monolithic filters; rectangular material discontinuities; two dimensional thin film resonators; two-dimensional numerical analysis; two-port devices; Aluminum nitride; Anisotropic magnetoresistance; Crystalline materials; Electrodes; Finite difference methods; Metallization; Microwave frequencies; Numerical analysis; Resonator filters; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1993. 47th., Proceedings of the 1993 IEEE International

Conference_Location

Salt Lake City, UT

Print_ISBN

0-7803-0905-7

Type

conf

DOI

10.1109/FREQ.1993.367436

Filename

367436