DocumentCode :
2374356
Title :
Numerical analysis of two dimensional thin film resonators
Author :
Lakin, K.M.
Author_Institution :
TFR Technol., Inc., Redmond, OR, USA
fYear :
1993
fDate :
2-4 Jun 1993
Firstpage :
502
Lastpage :
508
Abstract :
In order to gain a better understanding of thin-film resonators fabricated at microwave frequencies a two-dimensional numerical analysis (finite-difference) formalism was derived and implemented. The formalism allows for arbitrary crystal anisotropy, rectangular material discontinuities, and two-dimensional variations in the thickness and width dimensions. Resonators are assumed to be of infinite extent in one dimension. The formalism has been extended to include additional electrodes for two-port devices such as monolithic filters. Computed results are given for aluminum nitride resonators and filters having finite thickness metallization
Keywords :
acoustic microwave devices; aluminium compounds; crystal filters; crystal resonators; finite difference methods; microwave filters; piezoelectric thin films; AlN resonators; crystal anisotropy; finite difference methods; finite thickness metallization; microwave frequencies; monolithic filters; rectangular material discontinuities; two dimensional thin film resonators; two-dimensional numerical analysis; two-port devices; Aluminum nitride; Anisotropic magnetoresistance; Crystalline materials; Electrodes; Finite difference methods; Metallization; Microwave frequencies; Numerical analysis; Resonator filters; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 1993. 47th., Proceedings of the 1993 IEEE International
Conference_Location :
Salt Lake City, UT
Print_ISBN :
0-7803-0905-7
Type :
conf
DOI :
10.1109/FREQ.1993.367436
Filename :
367436
Link To Document :
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