• DocumentCode
    2374628
  • Title

    Precision frequency trimming of SAW and STW resonators using Xe+ heavy ion bombardment

  • Author

    Aliev, V.Sh. ; Avramov, I.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
  • fYear
    1993
  • fDate
    2-4 Jun 1993
  • Firstpage
    582
  • Lastpage
    586
  • Abstract
    A method for precision frequency trimming of surface acoustic wave (SAW) and surface transverse wave (STW) based resonant devices using an Xe+ heavy ion bombardment technique is described. The devices are down-trimmed in frequency in an in situ monitoring process by means of a Kaufmann-type ion source that first allows a rough frequency trimming and then a fine one with an accuracy of 1 ppm. An improvement of the device insertion loss and unloaded Q as a result of the trimming process is achieved. Single-mode 776-MHz STW resonators can be down trimmed by more than 5000 ppm without deteriorating their parameters while SAW resonators allow a much lower frequency downshift. The method is simple and can cost-effectively be applied to SAW and STW device fabrication
  • Keywords
    Q-factor; frequency response; frequency stability; ion beam effects; quartz; surface acoustic wave resonators; 776 MHz; Kaufmann-type ion source; Q value; SAW resonators; STW resonators; SiO2; Xe; Xe+ heavy ion bombardment technique; device insertion loss; in situ monitoring process; precision frequency trimming; quartz resonator; surface acoustic wave resonators; surface transverse wave resonators; Acoustic waves; Frequency; Insertion loss; Ion sources; Monitoring; Resonance; Rough surfaces; Surface acoustic wave devices; Surface acoustic waves; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 1993. 47th., Proceedings of the 1993 IEEE International
  • Conference_Location
    Salt Lake City, UT
  • Print_ISBN
    0-7803-0905-7
  • Type

    conf

  • DOI
    10.1109/FREQ.1993.367447
  • Filename
    367447