Title :
Precision frequency trimming of SAW and STW resonators using Xe+ heavy ion bombardment
Author :
Aliev, V.Sh. ; Avramov, I.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
Abstract :
A method for precision frequency trimming of surface acoustic wave (SAW) and surface transverse wave (STW) based resonant devices using an Xe+ heavy ion bombardment technique is described. The devices are down-trimmed in frequency in an in situ monitoring process by means of a Kaufmann-type ion source that first allows a rough frequency trimming and then a fine one with an accuracy of 1 ppm. An improvement of the device insertion loss and unloaded Q as a result of the trimming process is achieved. Single-mode 776-MHz STW resonators can be down trimmed by more than 5000 ppm without deteriorating their parameters while SAW resonators allow a much lower frequency downshift. The method is simple and can cost-effectively be applied to SAW and STW device fabrication
Keywords :
Q-factor; frequency response; frequency stability; ion beam effects; quartz; surface acoustic wave resonators; 776 MHz; Kaufmann-type ion source; Q value; SAW resonators; STW resonators; SiO2; Xe; Xe+ heavy ion bombardment technique; device insertion loss; in situ monitoring process; precision frequency trimming; quartz resonator; surface acoustic wave resonators; surface transverse wave resonators; Acoustic waves; Frequency; Insertion loss; Ion sources; Monitoring; Resonance; Rough surfaces; Surface acoustic wave devices; Surface acoustic waves; Surface roughness;
Conference_Titel :
Frequency Control Symposium, 1993. 47th., Proceedings of the 1993 IEEE International
Conference_Location :
Salt Lake City, UT
Print_ISBN :
0-7803-0905-7
DOI :
10.1109/FREQ.1993.367447
