Titanium silicide and titanium nitride layers formed in an integrated multichamber system

Author

Nulman, J. ; Cohen, B. ; Ngan, K.

Author_Institution

Appl. Conductor Technol. Div., Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

312

Lastpage

315

Abstract

The kinetics of titanium silicide and titanium nitride formation in an integrated multichamber system are described. The sequential processes include chambers for wafer cleaning, Ti sputtering, and subsequent annealing without exposing the wafer to ambient air. Integration results in effective nitridation of the Ti layer. The silicide reaction stops as soon as the nitrogen content in the Ti reaches 30% atomic fraction. Stoichiometric TiN is obtained with (111) crystallographic structure. The kinetics are compared to conventional processing in which the wafers are exposed to ambient air between Ti deposition and annealing steps

Keywords

annealing; chemical interdiffusion; metallisation; nitridation; sputtered coatings; titanium; titanium compounds; (111) crystallographic structure; Ti sputtering; Ti-Si; TiN; TiSi₂ layer; annealing; formation kinetics; integrated multichamber system; nitridation; silicide reaction; wafer cleaning; Annealing; Atomic layer deposition; Cleaning; Crystallography; Kinetic theory; Nitrogen; Silicides; Sputtering; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153010

Filename

153010