Title :
A 12-Gb/s 11-mW half-rate sampled 5-tap decision feedback equalizer with current-integrating summers in 45-nm SOI CMOS technology
Author :
Dickson, Timothy O. ; Bulzacchelli, John F. ; Friedman, Daniel J.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY
Abstract :
The design and experimental results of a low-power, low-area 5-tap DFE implemented in 45-nm SOI CMOS technology are reported. The DFE employs a low-power current-integrating summer with sampling front-end, which eliminates systematic frequency-dependent loss inherent in conventional integrating serial receivers. Further power and area savings are achieved through the use of a direct-feedback architecture and CMOS-style rail-to-rail clocking. The 5-tap DFE core occupies 73 times 50 mum2 and consumes 11 mW from a 1V supply when equalizing 12-Gb/s data passed over a 30rdquo channel with 15 dB of loss at 6 GHz.
Keywords :
CMOS integrated circuits; decision feedback equalisers; low-power electronics; silicon-on-insulator; summing circuits; CMOS-style rail-to-rail clocking; DFE; SOI CMOS technology; bit rate 12 Gbit/s; current-integrating summers; decision feedback equalizer; direct-feedback architecture; power 11 mW; sampling front-end; size 45 nm; voltage 1 V; Adders; CMOS technology; Circuits; Clocks; Decision feedback equalizers; Frequency; Intersymbol interference; Latches; Parasitic capacitance; Voltage;
Conference_Titel :
VLSI Circuits, 2008 IEEE Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1804-6
Electronic_ISBN :
978-1-4244-1805-3
DOI :
10.1109/VLSIC.2008.4585951