A wideband supply modulator for 20MHz RF bandwidth polar PAs in 65nm CMOS

Author

Shrestha, R. ; Der Zee, R. A R Van ; de Graauw, A.J.M. ; Nauta, B.

Author_Institution

Twente Univ., Enschede

fYear

2008

fDate

18-20 June 2008

Firstpage

92

Lastpage

93

Abstract

A wideband modulator for a 20 MHz bandwidth polar modulated PA is presented which achieves a maximum efficiency of 87.5% and a small signal -3 dB bandwidth of 285 MHz. Realized in 65 nm CMOS, it consists of a cascoded nested Miller compensated linear amplifier and a class D switching amplifier. It can deliver 22.7 dBm output power to a 5.3 Omega load. With a switching frequency of 118 MHz, the output switching ripple is 4.3 mVrms.

Keywords

CMOS analogue integrated circuits; power amplifiers; radiofrequency amplifiers; switching circuits; CMOS; Miller compensated linear amplifier; RF bandwidth polar PA; class D switching amplifier; frequency 118 MHz; frequency 20 MHz; frequency 285 MHz; resistance 5.3 ohm; size 65 nm; wideband supply modulator; Bandwidth; Broadband amplifiers; Capacitors; Low-noise amplifiers; Phase modulation; Power amplifiers; Radio frequency; Switching frequency; Transmitters; Wideband; CMOS and cascoded nested Miller; power amplifier; supply modulator;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2008 IEEE Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1804-6

Electronic_ISBN

978-1-4244-1805-3

Type

conf

DOI

10.1109/VLSIC.2008.4585964

Filename

4585964