Title :
Al/TiN/W/Si contact metallization using multi-chamber deposition system
Author :
Saitoh, S. ; Inoue, M. ; Hara, T.
Author_Institution :
Basic Process Dev. Div., Fujitsu Ltd., Kawasaki, Japan
Abstract :
Thermally Stable Al/TiN/W/Si contact metallization was fabricated using a multi-chamber deposition system that included a selective CVD module, a sputter etching module, and sputter deposition modules. The thermal stability of the contact resistance was affected by the exposure of W plugs to air. Sequentially deposited samples showed low and stable contact resistance up to 550°C. In contrast, for samples exposed to air after W plug formation, contact resistance was unstable. Air-exposure of the W plug degraded the contact system´s thermal stability
Keywords :
aluminium; chemical vapour deposition; contact resistance; integrated circuit technology; metallisation; silicon; sputter deposition; sputter etching; titanium compounds; tungsten; Al-TiN-W-Si contact metallization; VLSI circuits; air exposure; contact resistance; multi-chamber deposition; selective CVD module; sputter deposition modules; sputter etching module; thermal stability; Annealing; Contact resistance; Electrical resistance measurement; Leakage current; Metallization; Plugs; Sputter etching; Temperature; Thermal stability; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153013