Title :
The optical characterization of thin layers by spectrophotometry measurements
Author :
Kusko, M. ; Purica, M. ; Budianu, E.
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
fDate :
28 Sept.-2 Oct. 2003
Abstract :
In this paper are presented the results of optical analysis of thin films made by transmittance and reflectance spectrophotometry. The optical constants and layer thickness of a silicon carbide layer were determined using transmittance measurements. The method of thin films analysis used in this work can be applied to very thin films. Also, the thickness of a silicon dioxide layer thermally grown on silicon substrate was determined by fitting reflectance spectrum.
Keywords :
insulating thin films; optical constants; photoreflectance; semiconductor thin films; silicon compounds; spectrophotometry; thickness measurement; wide band gap semiconductors; SiC; SiO2; layer thickness; optical analysis; optical characterization; optical constants; reflectance spectrophotometry; spectrophotometry measurements; thin layers; transmittance spectrophotometry; Absorption; Equations; Extinction coefficients; Optical films; Optical refraction; Optical variables control; Reflectivity; Refractive index; Transistors; Wavelength measurement;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1251351
