Integrated Magnetic Loop Probe in GaAs Technology for Active Near-Field Sensor

Author

Uddin, Nasir ; Spang, Matthias ; Thiede, Andreas

Author_Institution

Dept.of High-Freq. Electron., Univ. of Paderborn, Paderborn

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

1070

Lastpage

1073

Abstract

This paper reports on design, simulation and measurement of miniature rectangular loops in OMMIC ED02AH GaAs technology. The loops are intended for integration on chip with other active circuitry for near-field scanning of printed circuit boards (PCB) as well as large scale integrated (LSI) circuits. Our target frequency range is from 1 MHz to 3 GHz and is planned to extend up to 10 GHz. Electromagnetic (EM) field simulation results from two simulators as well as on-wafer measurement results are presented. A new rectangular loop structure using the via-hole and backside metallization is proposed.

Keywords

III-V semiconductors; electromagnetic fields; gallium arsenide; microwave integrated circuits; printed circuits; sensors; GaAs; OMMIC ED02AH technology; PCB; active near-field sensor; backside metallization; electromagnetic field simulation; frequency 1 MHz to 3 GHz; integrated magnetic loop probe; large scale integrated circuits; miniature rectangular loops; on-wafer measurement; printed circuit boards; Circuit simulation; Frequency; Gallium arsenide; Integrated circuit measurements; Integrated circuit technology; Large scale integration; Magnetic sensors; Printed circuits; Probes; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751642

Filename

4751642