Title :
A 16Gb/s/link, 64GB/s bidirectional asymmetric memory interface cell
Author :
Chang, Ken ; Lee, Haechang ; Chun, Jung-Hoon ; Wu, Ting ; Chin, TJ ; Kaviani, Kambiz ; Shen, Jie ; Shi, Xudong ; Beyene, Wendem ; Frans, Yohan ; Leibowitz, Brian ; Nguyen, Nhat ; Quan, Fredy ; Zerbe, Jared ; Perego, Rich ; Assaderaghi, Fari
Author_Institution :
Rambus Inc., Los Altos, CA
Abstract :
An asymmetric memory interface cell with 32 bidirectional data and four unidirectional request links operating at 16 Gb/s per link is implemented in TSMC 65 nm CMOS process technology. Timing adjustment and equalization circuits for both memory read and write are on the controller to reduce the memory cost. Each link operates at a maximum rate of 16 Gb/s with sufficient and comparable margins in both directions at a BER of 10-12. The measured energy efficiency for the controller interface cell is 13 mW/Gb/s under nominal operating conditions.
Keywords :
CMOS memory circuits; timing circuits; BER; TSMC CMOS process technology; bidirectional asymmetric memory interface cell; bidirectional data links; bit rate 16 Gbit/s; equalization circuits; memory cost reduction; size 65 nm; timing adjustment circuits; unidirectional request links; Bit error rate; Circuits; Clocks; Equalizers; Frequency; Jitter; Phase locked loops; Random access memory; Timing; Voltage;
Conference_Titel :
VLSI Circuits, 2008 IEEE Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1804-6
Electronic_ISBN :
978-1-4244-1805-3
DOI :
10.1109/VLSIC.2008.4585978