DocumentCode
2375633
Title
Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter
Author
Cilio, Edgar ; Hornberger, Jared ; McPherson, Brice ; Schupbach, Roberto ; Lostetter, Alexander
Author_Institution
Arkansas Power Electron. Int. Inc., Fayetteville, AR
fYear
2006
fDate
6-10 Nov. 2006
Firstpage
1822
Lastpage
1827
Abstract
A proof-of-concept single-phase silicon carbide (SiC)-based 3 kW inverter multichip power module (MCPM) has been built and tested achieving significant volume reduction (~85% smaller) when compared with similar state-of-the-art Si-based single-phase inverter modules. The SiC-based MCPM was tested from room temperature up to baseplate temperature of 250 degC while delivering over 120 Vrms to the load
Keywords
invertors; multichip modules; silicon compounds; 25 degC; 3 kW; SiC; inverter multichip power module; proof-of-concept single-phase silicon carbide; single-phase inverter modules; volume reduction; Fabrication; Inverters; Microcontrollers; Multichip modules; Oscillators; Power electronics; Silicon carbide; Silicon on insulator technology; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on
Conference_Location
Paris
ISSN
1553-572X
Print_ISBN
1-4244-0390-1
Type
conf
DOI
10.1109/IECON.2006.347960
Filename
4153581
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